Device Physics of Superlattices and Small Structures by McGill,T C

Cover of: Device Physics of Superlattices and Small Structures | McGill,T C

Published by Defense Technical Information Center in Ft. Belvoir .

Written in English

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  • Infrared detectors,
  • Zinc tellurides,
  • Radiation and Nuclear Chemistry,
  • Electronic equipment,
  • Cadmium tellurides,
  • Infrared Detection and Detectors,
  • Dilution,
  • Structures,
  • Optical properties,
  • Negative resistance circuits,
  • Photoconductivity,
  • Radiation absorption,
  • Semiconductors,
  • Infrared radiation,
  • Solid state physics,
  • Lattice dynamics,
  • Solid State Physics,
  • Magnetic materials,
  • Photoluminescence,
  • Crystal lattices,
  • Mercury compounds,
  • Estimates

About the Edition

Experimental and theoretical studies are presented of HgTe CdTe superlattices. We report the first study of the photoluminescence and photoconductivity spectra of superlattices. We find that Photoluminescence, photoconductivity and infrared absorption all point to the same band gap for the superlattice. Theoretical studies of these superlattices have given the first estimates of the magnitude of the optical absorption, the first study of the role of strain, and the first study of the role of the band offset in determining the properties of superlattices. We have also invented a novel electronic device that has negative resistance based on HgCdTe-CdTe-HgCdTe heterostructures. We have carried out the first theoretical studies of superlattices that include dilute magnetic semiconductors. Superlattices of CdTe-ZnTe have been studied experimentally and theoretically to give the first investigations of the properties of possible II-IV visible light emitters.

Edition Notes


Book details

The Physical Object
Pagination88 p.
Number of Pages88
ID Numbers
Open LibraryOL24926596M

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Device Physics of Superlattices and Small Structures Item Preview Device Physics of Superlattices and Small Structures by McGill,T C; CALIFORNIA INST OF TECH PASADENA.

no page number in the book. Access-restricted-item true Addeddate Boxid IA CameraPages: DTIC ADA Small Structures and Superlattices for Future High-Speed Devices Item Preview.

This volume combines with Vol Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor Edition: 1.

Meanwhile, technological advances in semiconductor growth have given rise to a veritable renaissance in the field of semiconductor physics. Light scattering spectroscopy has played a crucial role in the advancement of this field, providing valuable information about the electronic, vibrational and structural properties both of the host.

The device contains an active QW region inserted between two DBR mirrors consisting of AlGaAs quarter wave stacks made of alternating high and low refractive index layers. The structure is grown on an n-type GaAs substrate, and the mirrors are appropriately doped n- or p-type to form a p-n by: 9.

Fig. Device characterization showing signatures of resonant tunneling in the (a) current, (b) conductance (acquired at mV rms), and (c) dG=dV profiles ( mV rms) of the device under investigation. All measurements are taken at K.

Z.A. Kobos et al. / Superlattices and Microstructures () e Superlattices and Quantum Well Structures. Superlattices and quantum well structures consist of periodic stacking of very thin alternating layers of two different semiconductors that are either lattice matched or lattice mismatched.

Novel electronic and photonic devices have been realized utilizing “bandgap engineering” of these artificially layered structures. Superlattice is a periodic structure of layers of two or more materials. Typically the width of layers is orders of magnitude larger than the lattice constant, and is limited by the growth of the structure[1].

As shown in the figure below, it is a superlattice formed by. 1 MOSFET Device Physics and Operation INTRODUCTION A field effect transistor (FET) operates as a conducting semiconductor channel with two ohmic contacts – the source and the drain – where the number of charge carriers in the channel is controlled by a third contact – the the vertical direction, the gate.

Superlattices and Microstructures is a journal disseminating the science and technology of synthetic heterostructures, including individual and collective use of semiconductors, metals and insulators for the exploitation of their unique properties. The journal hosts papers dealing with fundamental and.

Miniband structure. The schematic structure of a periodic superlattice is shown below, where A and B are two semiconductor materials of respective layer thickness a and b (period: = +).When a and b are not too small compared with the interatomic spacing, an adequate approximation is obtained by replacing these fast varying potentials by an effective potential derived from the band structure.

Optical Physics of Quantum Wells David A. Miller Rm. 4B, AT&T Bell Laboratories Device Physics of Superlattices and Small Structures book, NJ USA 1 Introduction Quantum wells are thin layered semiconductor structures in which we can observe and control.

The book starts with a review of 2D and 3D crystals based on carbon and/or silicon. The second part of the book is devoted to the description at the nanoscale of the new structures and complex architectures that ensue from them.

The originality of the book lies in the fact that it deals with these scarcely evoked structures. Nanocrystalline Silicon Superlattices: Building Blocks for Quantum Devices Article in Materials Science and Engineering B January with 24 Reads How we measure 'reads'. Heterojunctions and Semiconductor Superlattices: Proceedings of the Winter School Les Houches, France, March 12–21, [Allan, Guy, Bastard, Gerals, Boccara, Nino, Lannoo, Michel, Voos, Michel] on *FREE* shipping on qualifying offers.

Heterojunctions and Semiconductor Superlattices: Proceedings of the Winter School Les Houches, France, March. The MBE technique has made feasible the growth of periodic semiconductor structures composed of ultrathin layers with alternating p‐ and n‐doping. This kind of superlattice, in contrast to familiar heterostructure systems, does not contain any interfaces, and, therefore, does not show the problems related to those.

Doping superlattices, on the contrary, are. Airy-function electron localization in the oxide superlattices Z. Popovic* and S. Satpathy Department of Physics, University of Missouri, Columbia, MOUSA Oxide superlattices and microstructures hold the promise for creating a new class of devices with unprecedented functionalities.

Density-functional. The surface chemistry in colloidal nanocrystals on the final crystalline structure of binary superlattices produced by self-assembly of two sets of nanocrystals is hereby demonstrated.

By mixing nanocrystals having two different sizes and the same coating agent, oleylamine (OAM), the binary nanocrystal superlattices that are produced, such as NaCl, AlB2, NaZn13, and MgZn2. We investigate in situ the structural changes during self-assembly of PbS nanocrystals from colloidal solution into superlattices, solvent evaporation, and ligand exchange at the acetonitrile/air interface by grazing incidence small-angle X-ray scattering (GISAXS).

We simulate and fit the diffraction peaks under the distorted wave Born approximation (DWBA) to. For small twist angles in the stacking, the moiré pattern due to lattice misorientation can lead to long-range modulation, i.e., a moiré superlattice, which has recently been employed to engineer energy band structures.

5,6) In graphene, higher-energy scales (e.g. near the van Hove singularity) are difficult to access without energy band. We show that the GS at that point, namely, J m =J f =J m f = −is very sensitive to the applied magnetic field—a clear and periodic skyrmion structure is formed for small magnitude of H.

Figure 10a shows the case H = We see that a skyrmion lattice is formed with a perfect symmetry. The simple materials physics of 1) intrinsic direct bandgap semiconductors; 2) extrinsic semiconductors; 3) quantum well devices, including types I, II, and III superlattices.

Philippe Kowalczyk, Françoise Hippert, Nicolas Bernier, Cristian Mocuta, Chiara Sabbione, Walter Batista‐Pessoa, Pierre Noé, Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2Te3 Superlattices Used in Interfacial Phase‐Change Memory (iPCM) Devices, Small, /smll, 14, 24, ().

Superlattices and Microstructures 76 () – source [25]. Second challenge is not fully the understanding device physics that causes questionable structures, such as the small band-gap materials or high-j dielectric materials. From there, the exploration of asymmetric superlattices (wherein the thickness of the nearest SrTiO 3 and/or PbTiO 3 layers is varied in a periodic manner) or even “tricolor” superlattices (of the form A/B/C/A/B/C) could provide a route to break the out-of-plane symmetry of the structures and drive a new function.

There are even potential. The twisted superlattices consist of alternating AA- and AB-stacked regions, while the Brillouin zone folds as shown in figure 1(b).

Each atomistic model of commensurate superlattices consists of two graphene layers with in-plane lattice constant ofwhile the distance between the two graphene layers is fixed at MgO has a very small lattice mismatch to the cubic rocksalt structure of NiO and to the half‐unit‐cell dimension of the spinel structure of Fe 3 O 4.

Pseudomorphic growth of superlattices consisting of alternating layers of NiO and Fe 3 O 4 with repeat wavelength down to 17 Å and of single thick layers of either of these materials are. Band structures of free-standing.

(a) Germanene calculated with a 4 × 4 supercell, (b) MoS 2 monolayer calculated with a 5 × 5 supercell, and (c) silicene calculated with a 4 × 4 supercell. (d, e) The band structures of Ger/MoS 2 and Sil/MoS 2 superlattices, respectively. The contributions from the germanene/silicene and MoS 2 layers to the band structures of the superlattices.

Abstract: Direct visualization of nanometer-scale properties of moiré superlattices in van der Waals heterostructure devices is a critically needed diagnostic tool for study of the electronic and optical phenomena induced by the periodic variation of atomic structure.

ISBN: OCLC Number: Notes: "Proceedings of the NATO Advanced Research Workshop on Light Scattering in Semiconductor Structures and Superlattices, held March, in Mont-Tremblant, Québec, Canada"--Title page verso.

The new method generates superlattice structures at a liquid–air interface, allowing the material to be freestanding or to be transferred to any substrate ready for fabrication into devices. High-quality superlattices have been produ22 in the Bi 2 Te 3 system, with one of the individual layers as small as 10 Å, using a.

Infrared sources and detectors have found widespread scientific and industrial applications in mid-to-long infrared (IR) imaging systems. The principle applications of such materials in the past have been for military only – to detect and track hot objects at long range, to provide completely passive night-vision and to give assisted daytime vision when the atmospheric transmission in.

Two-dimensional atomic crystals (2DACs) have attracted intense recent interest. With a nearly perfect crystalline structure and dangling-bond free surface, these atomically thin materials have emerged as a new material platform for fundamental materials science and diverse technology opportunities at the lim 2D nanomaterials: graphene and transition metal dichalcogenides.

To design a multiferroic material at atomic scale, strong spin-lattice and charge-lattice couplings play crucial roles. Our first-principles calculation on (SrCoO 3) 1 /(SrTiO 3) 1 superlattices, with above coupling properties, yields a rich physical phase diagram as a function of epitaxial strain.

In particular, a robust ferroelectric ferromagnetic insulator of Pc symmetry is stabilized at. Three-terminal bistable switching devices based on effective-mass superlattices are proposed and analysed.

The essential feature of the device is the presence of negative resistance controlled by the small gate voltage. Structure And Properties Of Graphene. Structure And Properties Of Carbon Nanotubes.

Conclusion And Outlook. References. Chapter 7: One-Dimensional Semiconductor Nanowires: Synthesis and Raman Scattering. Introduction. Synthesis and Growth Mechanism of 1D Semiconductor Nanowires. Raman Scattering in 1D Nanowires. semiconductor structure comprising of several ultra-thin layers (atomic layers) engineered to obtain specific electronic and photonic properties; slight modifications of chemical composition of each layer result in slight variations of energy bandgap from layer to layer: bandgap engineering; fabrication of superlattices requires high-precision.

Get this from a library. Light scattering in semiconductor structures and superlattices. [David J Lockwood; Jeff F Young; North Atlantic Treaty Organization. Scientific Affairs Division.; Special Program on Condensed Systems of Low Dimensionality (NATO);] -- Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained.

The photoemission from quantum wires and dots of effective mass superlattices of optoelectronic materials was investigated on the basis of newly formulated electron energy spectra, in the presence of external light waves, which controls the transport properties of ultra-small electronic devices under intense radiation.

Miniband structure. The schematic structure of a periodic superlattice is shown below, where A and B are two semiconductor materials of respective layer thickness a and b (period:).When a and b are not too small compared with the interatomic spacing, an adequate approximation is obtained by replacing these fast varying potentials by an effective potential derived from the band structure .In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure.

However, in some cases a controlled oxidation can open the possibility to widely tune the band structure .The MBE growth of short-period InAs/GaSb type-II superlattice structures, varied around A InAs/24 A GaSb were [J.

Applied physics, 96, ()] carried out by Haugan et al. These SLs were designed to produce devices with an optimum mid-infrared photoresponse and a sharpest photoresponse cutoff.

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